12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor
Description
TC2623
12GHz Super Low Noise HEMT
AlGaAs/GaAs Field Effect Transistor Description
The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Transistor. This device is based on a 0.25µm mushroom Aluminium gate associated with an HEMT active layer and passivated with a SI3N4 layer. It is mounted in a 70mils hermetic ceramicmetal package, easy to match ...