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IRFR230A
Advanced Power MOSFET
Description
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V Low RDS(ON) : 0.333 Ω (Typ.) IRFR/U230A BVDSS = 200 V RDS(on) = 0.4 Ω ID = 7.5 A D-PAK 2 1 3 1 I-PAK 2 3 1. Gate 2. Drain 3. Source Absolute M...
Fairchild Semiconductor
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