H30R1202 IGBT Datasheet

H30R1202 Datasheet, PDF, Equivalent


Part Number

H30R1202

Description

Reverse Conducting IGBT

Manufacture

Infineon

Total Page 12 Pages
Datasheet
Download H30R1202 Datasheet


H30R1202
IHW30N120R2
Soft Switching Series
Reverse Conducting IGBT with monolithic body diode
Features:
Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
Inductive Cooking
Soft Switching Applications
C
G
E
PG-TO-247-3
Type
IHW30N120R2
VCE
1200V
IC
30A
VCE(sat),Tj=25°C
1.65V
Tj,max
175°C
Marking
H30R1202
Package
PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE 1200V, Tj 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp 2.5µs, sine halfwave
TC = 100°C, tp 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 5 ms)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
Value
1200
60
30
90
90
60
30
90
50
130
120
±20
±25
390
-40...+175
-55...+175
260
Unit
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com

H30R1202
IHW30N120R2
Soft Switching Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
0.38
0.37
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
RGint
VGE=0V, IC=1mA
VGE = 15V, IC=30A
Tj=25°C
Tj=125°C
Tj=175°C
VGE=0V, IF=30A
Tj=25°C
Tj=125°C
Tj=175°C
IC=0.7mA,
VCE=VGE
VCE=1200V,
VGE=0V
Tj=25°C
Tj=175°C
VCE=0V,VGE=20V
VCE=20V, IC=30A
min.
1200
-
-
-
-
-
-
5.1
-
-
-
-
Value
Typ.
-
1.65
1.85
2.0
1.55
1.7
1.75
5.8
-
-
-
19.7
none
Unit
max.
-V
1.8
-
-
1.8
-
-
6.4
µA
5
2500
100
-
nA
S
Power Semiconductors
2
Rev. 1.5 Dec. 09
Free Datasheet http://www.0PDF.com


Features IHW30N120R2 Soft Switching Series Rever se Conducting IGBT with monolithic body diode Features: • Powerful monolithi c Body Diode with very low forward volt age • Body diode clamps negative volt ages • TrenchStop® and Fieldstop tec hnology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable be havior • NPT technology offers easy p arallel switching capability due to pos itive temperature coefficient in VCE(sa t) • Low EMI • Qualified according to JEDEC1 for target applications • P b-free lead plating; RoHS compliant • Complete product spectrum and PSpice M odels : http://www.infineon.com/igbt/ A pplications: • Inductive Cooking • Soft Switching Applications Type IHW30N 120R2 Maximum Ratings Parameter Collect or-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collecto r current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC = 100°C Diode pulsed current, tp limited by.
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