·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■APPLICATION: High Voltage Switching Applications.
C3207
—NPN silicon —
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC TJ Tstg RATING UNIT 300 300 7 100 1 150 V V V mA W ℃
1
TO-92L
1. Emitter 2. Collector 3. Base
﹣55~150 ℃
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance SYMBOL hFE ICBO IEBO BVCBO BVCEO BVEBO VCE(sat) VBE(sat) fT Cob 50 3 300 300 7 1 1 30 MIN. TYP. MAX. UNIT 150 1 1 µA µA V V V V V MHz PF TEST CONDITION VCE= 10V,Ic= 20mA VCB= 240V,IE=0 VEB= 7V,Ic=0 Ic= 0.1mA,IE=0 Ic= 1mA,IB=0 IE= 0.1mA,Ic=.