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2N2222A Datasheet, Equivalent, SILICON TRANSISTOR.NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR |
Part | 2N2222A |
---|---|
Description | NPN SILICON TRANSISTOR |
Feature | 2N2221A 2N2222A
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m D ESCRIPTION: The CENTRAL SEMICONDUCTOR 2 N2221A and 2N2222A are silicon NPN epit axial planar transistors designed for s mall signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25° C) Collector-Base Voltage Collector-Emi tter Voltage Emitter-Base Voltage Conti nuous Collector Current Power Dissipati on Power Dissipation (TC=25°C) Operati ng and Storage Junction Temperature The rmal Resistance Thermal Resistance SYM BOL VCBO VCEO VEBO IC PD PD TJ, Tstg Θ JA ΘJC 75 40 6. 0 . |
Manufacture | Central |
Datasheet |
Part | 2N2222A |
---|---|
Description | NPN SILICON TRANSISTOR |
Feature | 2N2221A 2N2222A
SILICON NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m D ESCRIPTION: The CENTRAL SEMICONDUCTOR 2 N2221A and 2N2222A are silicon NPN epit axial planar transistors designed for s mall signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25° C) Collector-Base Voltage Collector-Emi tter Voltage Emitter-Base Voltage Conti nuous Collector Current Power Dissipati on Power Dissipation (TC=25°C) Operati ng and Storage Junction Temperature The rmal Resistance Thermal Resistance SYM BOL VCBO VCEO VEBO IC PD PD TJ, Tstg Θ JA ΘJC 75 40 6. 0 . |
Manufacture | Central |
Datasheet |
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