Effect Transistor. 80N60 Datasheet

80N60 Datasheet PDF, Equivalent


Part Number

80N60

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Cmos

Total Page 2 Pages
PDF Download
Download 80N60 Datasheet


80N60 Datasheet
CMP80N06/CMB80N06/CMI80N06
N-Channel Enhancement Mode Field Effect Transistor
General Description
Product Summery
The 80N06 is N-ch MOSFET
with extreme high cell density ,
which provide excellent RDSON
and gate charge for most of the
synchronous buck converter
applications.
Features
Simple Drive Requirement
Fast Switching
Low On-Resistance
Absolute Maximum Ratings
BVDSS
60V
RDSON
7.8m
ID
80A
Applications
Motor Control
DC-DC converters
General Purpose Power Amplifier
TO220/263/262 Pin Configuration
G
DS
TO-220
(CMP80N06)
GD
S
TO-263
(CMB80N06)
G DS
TO-262
(CMI80N06)
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Sou ce Voltage
Continuous Drain Current1
Continuous Drain Current1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Value
60
20
80
50
250
405
80
260
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
R JA
R JC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-case
Value
62
0.9
Unit
/W
/W
1
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80N60 Datasheet
CMP80N06/CMB80N06/CMI80N06
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
BVDSS
Parameter
Drain-Source Breakdown Voltage
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
IDSS
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
VGS=10V , ID=80A
VGS=4.5V , ID=80A
VGS=VDS , ID =250uA
VDS=60V , VGS=0V
VDS=60V , VGS=0V , Tj=125 °C
VGS 20V
VDS=10V , ID=40A
VDS=0V , VGS=0V , f=1MHz
ID = 80A
VDS =30V
VGS =0 to 10V
V DS =30V
ID=80A
R G=3.3
V GS =10V
VDS=25V , VGS=0V , f=1MHz
Min. Typ. Max. Unit
60 --- ---
V
--- 6.5 7.8
m
--- 8.2 14
2 --- 4
V
--- --- 1 uA
--- --- 100
--- --- 100 nA
--- 50 ---
S
--- 1.5
---
--- 76 ---
--- 24 ---
nC
--- 35 ---
--- 45
---
--- 160
--- 95
---
---
ns
--- 68
---
--- 3800 ---
--- 815 ---
pF
--- 300 ---
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1
Pulsed Source Current2
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=80 A , TJ=25
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=24V,VGS=10V,L=0.13mH,IAS=80A
Min.
---
---
---
Typ.
---
---
---
Max.
80
250
1.5
Unit
A
A
V
2


Features Datasheet pdf CMP80N06/CMB80N06/CMI80N06 N-Channel Enh ancement Mode Field Effect Transistor G eneral Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Features Simple Drive Requirement Fas t Switching Low On-Resistance G D BVDS S 60V Applications Motor Control DC-DC converters RDSON 7.8m ID 80A General Purpose Power Amplifier TO220/263/262 Pin Configuration G S D S TO-220 (C MP80N06) TO-263 (CMB80N06) G D S TO- 262 Absolute Maximum Ratings Symbol VD S VGS ID@TC=25 ID@TC=100 IDM EAS IAS PD @TC=25 TSTG TJ Parameter (CMI80N06) V alue 60 20 80 50 250 3 1 Units V V A A A mJ A W Drain-Source Voltage Gate-So u ce Voltage Continuous Drain Current 1 Continuous Drain Current Pulsed Drain Current Avalanche Current Total Power D issipation Storage Temperature Range Op erating Junction Temperature Range 2 S ingle Pulse Avalanche Energy 405 80 260 -55 to 175 -55 to 175 .
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