40N15 MOSFET Datasheet

40N15 Datasheet, PDF, Equivalent


Part Number

40N15

Description

40A 150V N-CHANNEL POWER MOSFET

Manufacture

UNISONIC TECHNOLOGIES

Total Page 3 Pages
Datasheet
Download 40N15 Datasheet


40N15
UNISONIC TECHNOLOGIES CO., LTD
40N15
Preliminary
40A, 150V N-CHANNEL
POWER MOSFET
Power MOSFET
„ DESCRIPTION
The UTC 40N15 is an N-channel enhancement MOSFET, it uses
UTC’s advanc ed techn ology to provide th e customers with perfect
RDS(ON), hig h sw itching spe ed, high current capacity a nd l ow gate
charge.
„ FEATURES
* RDS(ON)<42m@ VGS=10V,ID=20A
* High Switching Speed
* High Current Capacity
* Low Gate Charge(typical 85nC)
„ ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
40N15L-TF2-T
40N15LG-TF2-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F2
1
TO-220F2
Pin Assignment
123
GDS
Packing
Tube
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R502-882.a
http://www.Datasheet4U.com

40N15
40N15
Preliminary
Power MOSFET
„ ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS 150
VGSS ±25
V
V
Drain Current
Avalanche Current
Continuous I
Pulsed
D 40
IDM
IAR
180
45.6
A
A
A
Avalanche Energy
Single Pulsed
Repetitive
Peak Diode Recovery dv/dt
EAS 650
EAR
dv/dt
21
6
mJ
mJ
V/ns
Power Dissipation
PD 210
W
Junction Temperature
Storage Temperature Range
TJ
TSTG
-50~+150
-50~+150
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC 0.7
RATINGS
62.5
UNIT
°C/W
°C/W
„ ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=250µA 150
Breakdown Voltage Temperature Coefficient BVDSS/TJ
Drain-Source Leakage Current
IDSS VGS=0V, VDS=150V
Gate-Source Leakage Current
Forward
Reverse V
IGSS
VGS=+20V, VDS=0V
GS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
Forward Transconductance
VGS(TH)
RDS(ON)
gFS
VDS=VGS, ID=250µA
VGS=10V, ID=20A 5
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
SWITCHING PARAMETERS
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall-Time
QG
QGS
QGD
tD(ON)
tR
tD(OFF)
tF
VGS=10V, VDD=50V,
ID=1.3A, IG=100µA
VGS=0~10V, VDD=30V,
ID=0.5A, RG=25
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD IS=40A, VGS=0V 0.1
Body Diode Reverse Recovery Time
tRR VGS=0V, IS=45.6A
Body Diode Reverse Recovery Charge
QRR dIF/dt=100A/µs
MIN TYP MAX UNIT
V
0.16 V/°C
900 nA
+100 nA
-100 nA
2.2 3.8 V
42 m
33 s
250 0 3250
520 670
100 130
pF
pF
pF
85
15
41
35
320
210
200
110
80
650
430
410
nC
nC
nC
ns
ns
ns
ns
45.6
182.4
1.48
130
0.55
A
A
V
ns
µC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R502-882.a


Features UNISONIC TECHNOLOGIES CO., LTD 40N15 Pre liminary Power MOSFET 40A, 150V N-CHAN NEL POWER MOSFET „ DESCRIPTION 1 The UTC 40N15 is an N-channel enhancement M OSFET, it uses UTC’s advanc ed techn ology to provide th e customers with pe rfect RDS(ON), hig h sw itching spe ed, high current capacity a nd l ow gate c harge. TO-220F2 „ FEATURES * RDS(O N)<42mΩ @ VGS=10V,ID=20A * High Switc hing Speed * High Current Capacity * Lo w Gate Charge(typical 85nC) „ ORDERI NG INFORMATION Package TO-220F2 1 G Pin Assignment 2 3 D S Packing Tube Order ing Number Lead Free Halogen Free 40N15 L-TF2-T 40N15LG-TF2-T Note: Pin Assignm ent: G: Gate D: Drain S: Source www.un isonic.com.tw Copyright © 2013 Unisoni c Technologies Co., Ltd 1 of 3 QW-R502 -882.a http://www.Datasheet4U.com 40N1 5 „ Preliminary Power MOSFET ABSOLU TE MAXIMUM RATINGS PARAMETER SYMBOL RA TINGS UNIT Drain-Source Voltage VDSS 15 0 V Gate-Source Voltage VGSS ±25 V A C ontinuous I D 40 Drain Current Pulsed IDM 180 A Avalanche Current IAR 45..
Keywords 40N15, datasheet, pdf, UNISONIC TECHNOLOGIES, 40A, 150V, N-CHANNEL, POWER, MOSFET, 0N15, N15, 15, 40N1, 40N, 40, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)