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2SD2491. D2491 Datasheet

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2SD2491. D2491 Datasheet






D2491 2SD2491. Datasheet pdf. Equivalent




D2491 2SD2491. Datasheet pdf. Equivalent





Part

D2491

Description

2SD2491

Manufacture

Hitachi Semiconductor

Datasheet
Download D2491 Datasheet


Hitachi Semiconductor D2491

D2491; 2SD2491, 2SD2492 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Features • Isolated packag e TO-126FM Outline TO-126FM 1 2 1. Emitter 2. Collector 3. Base 3 http:/ /www.Datasheet4U.com 2SD2491, 2SD2492 Absolute Maximum Ratings (Ta = 25°C) R atings Item Collector to base voltage C ollector to emitter voltage Emitter to base voltage Collecto.


Hitachi Semiconductor D2491

r current Collector power dissipation Co llector power dissipation Junction temp erature Storage temperature Note: 1. Va lue at TC = 25°C Symbol VCBO VCEO VEBO IC PC PC * Tj Tstg 1 2SD2491 160 160 5 100 1.35 8 150 –55 to +150 2SD2492 200 200 5 100 1.35 8 150 –55 to +150 Unit V V V mA W W °C °C Electrical Characteristics (Ta = 25°C) 2SD2491 I tem Collector to base brea.


Hitachi Semiconductor D2491

kdown voltage Collector to emitter break down voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO 1 2S D2492 Max — — — 10 — 320 — 1. 5 2 — — Min 200 200 5 — — 60 30 — — — — Typ — — — — — — — — 140 3.8 Max — — — 10 320 — 1.5 2 — — V V MHz pF Unit V V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞.



Part

D2491

Description

2SD2491

Manufacture

Hitachi Semiconductor

Datasheet
Download D2491 Datasheet




 D2491
2SD2491, 2SD2492
Silicon NPN Epitaxial
Application
Low frequency high voltage amplifier
Features
Isolated package
TO-126FM
Outline
TO-126FM
123
1. Emitter
2. Collector
3. Base
http://www.Datasheet4U.com





 D2491
2SD2491, 2SD2492
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
PC
PC * 1
Tj
Tstg
Ratings
2SD2491
160
160
5
100
1.35
8
150
–55 to +150
2SD2492
200
200
5
100
1.35
8
150
–55 to +150
Unit
V
V
V
mA
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
2SD2491
2SD2492
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
160 —
200 —
V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
160 —
200 —
V
IC = 1 mA, RBE =
Emitter to base
breakdown voltage
V(BR)EBO
5
—— 5
—— V
IE = 10 µA, IC = 0
Collector cutoff current ICBO
DC current transfer ratio hFE1*1
DC current transfer ratio hFE2
Base to emitter voltage VBE
Collector to emitter
saturation voltage
VCE(sat)
——
——
60 —
30 —
——
——
10 —
——
320 60
— 30
1.5 —
2—
µA
10 µA
320
1.5 V
2V
VCB = 140 V, IE = 0
VCB = 160 V, IE = 0
VCE = 5 V, IC = 10 mA
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 10 mA
IC = 30 mA, IB = 3 mA
Gain bandwidth product fT
Collector output
capacitance
Cob
— 140 — — 140 — MHz VCE = 5 V, IC = 10 mA
— 3.8 — — 3.8 — pF VCB = 10 V, IE = 0
f = 1 MHz
Note: 1. The 2SD2491 and 2SD2492 are grouped by hFE1 and its specification is as follows.
B
60 to 120
CD
100 to 200 160 to 320
2





 D2491
See characteristic curves of 2SD1609, 2SD1610.
2SD2491, 2SD2492
Maximum Collector Dissipation Curve
8
6
Tc
4
2
1.35W
Ta
0 50 100 150 200
Case Temperature Tc (°C)
Ambient Temperature Ta (°C)
3



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