40N25 FQA40N25 Datasheet

40N25 Datasheet, PDF, Equivalent


Part Number

40N25

Description

FQA40N25

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download 40N25 Datasheet


40N25
FQA40N25
N-Channel QFET® MOSFET
250 V, 40 A, 70 mΩ
April 2014
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 40 A, 250 V, RDS(on) = 70 mΩ (Max.) @ VGS = 10 V,
ID = 20 A
• Low Gate Charge ( Typ. 85nC)
• Low Crss ( Typ. 70pF)
• 100% Avalanche Tested
D
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TO-3PN
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S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.

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©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
1
www.fairchildsemi.com
http://www.Datasheet4U.com

40N25
Package Marking and Ordering Information
Part Number
FQA40N25
Top Mark
FQA40N25
Package
TO-3PN
Packing Method Reel Size
Tube
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25oC unless otherwise noted.


    
    
 
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1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.8 mH, IAS = 40 A, VDD = 50 V, RG = 25 , Starting TJ = 25oC
3. ISD 40 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, Starting TJ = 25oC
4. Essentially independent of operating temperature
©2000 Fairchild Semiconductor Corporation
FQA40N25 Rev. C2
2
www.fairchildsemi.com


Features FQA40N25 — N-Channel QFET® MOSFET Ap ril 2014 FQA40N25 N-Channel QFET® MOS FET 250 V, 40 A, 70 mΩ Description Thi s N-Channel enhancement mode power MOSF ET is produced using Fairchild Semicond uctor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The se devices are suitable for switched mo de power supplies, active power factor correction (PFC), and electronic lamp b allasts. Features • 40 A, 250 V, RDS (on) = 70 mΩ (Max.) @ VGS = 10 V, ID = 20 A • Low Gate Charge ( Typ. 85nC) • Low Crss ( Typ. 70pF) • 100% Aval anche Tested D G G D S TO-3PN S A bsolute Maximum Ratings T  + 6  6 + <  6 < !$ 8     C = 25 C unless otherwise noted. o     +      2 -)*74        2 -0''74     8      )*' &' )* .
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