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2SK1444. K1444 Datasheet

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2SK1444. K1444 Datasheet






K1444 2SK1444. Datasheet pdf. Equivalent




K1444 2SK1444. Datasheet pdf. Equivalent





Part

K1444

Description

2SK1444



Feature


http://www.Datasheet4U.com .
Manufacture

Sanyo Semicon Device

Datasheet
Download K1444 Datasheet


Sanyo Semicon Device K1444

K1444; .


Sanyo Semicon Device K1444

.


Sanyo Semicon Device K1444

.

Part

K1444

Description

2SK1444



Feature


http://www.Datasheet4U.com .
Manufacture

Sanyo Semicon Device

Datasheet
Download K1444 Datasheet




 K1444
Ordering number:EN3447C
N-Channel Silicon MOSFET
2SK1444
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2078B
[2SK1444]
10.0
3.2
4.5
2.8
0.9
1.2
0.75
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
2.55
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
2.55
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=0.5A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=0.5A, VGS=10V
(Note) Be careful in handling the 2SK1444 because it has no protection diode between gate and source.
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI (LS)
Ratings
450
±30
3
12
2.0
25
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
450 V
1.0 mA
±100 nA
2.0 3.0 V
1.1 2.2
S
2.0 2.6
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TH (KT)/72597TS (KOTO)/7151JN (KOTO) No.3447–1/4




 K1444
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Switching Time Test Circuit
2SK1444
Symbol
Conditions
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
IS=3A, VGS=0
Ratings
min typ max
Unit
400 pF
60 pF
25 pF
12 ns
20 ns
80 ns
35 ns
1.8 V
No.3447–2/4




 K1444
2SK1444
No.3447–3/4



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