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Power MOSFET. AP09N70I-A-HF-3 Datasheet

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Power MOSFET. AP09N70I-A-HF-3 Datasheet






AP09N70I-A-HF-3 MOSFET. Datasheet pdf. Equivalent




AP09N70I-A-HF-3 MOSFET. Datasheet pdf. Equivalent





Part

AP09N70I-A-HF-3

Description

N-channel Enhancement-mode Power MOSFET



Feature


Advanced Power Electronics Corp. AP09N7 0I-A-HF-3 N-channel Enhancement-mode P ower MOSFET Simple Drive Requirement 10 0% Avalanche Tested Fast Switching Perf ormance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 0.75 Ω 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, lo w on-resistance and .
Manufacture

Advanced Power Electronics

Datasheet
Download AP09N70I-A-HF-3 Datasheet


Advanced Power Electronics AP09N70I-A-HF-3

AP09N70I-A-HF-3; cost-effectiveness. The AP09N70I-A-HF-3 is in the TO-220CFM isolated through-ho le package which is widely used in comm ercial and industrial applications wher e a small PCB footprint or an attached isolated heatsink is required. This dev ice is well suited for use in high volt age applications such as off-line AC/DC converters. G D S TO-220CFM (I) A bsolute Maximum Ra.


Advanced Power Electronics AP09N70I-A-HF-3

tings Symbol VDS VGS ID at TC=25°C ID a t TC=100°C IDM PD at TC=25°C EAS IAR EAR TSTG TJ Parameter Drain-Source Volt age Gate-Source Voltage Continuous Drai n Current Continuous Drain Current Puls ed Drain Current 1 3 3 Rating 65 0 + 3 0 9 5 40 42 0.34 Units V V A A A W W/ C mJ A mJ °C °C Total Power Dissipa tion Linear Derating Factor Single Puls e Avalanche Avalanche Cu.


Advanced Power Electronics AP09N70I-A-HF-3

rrent Repetitive Avalanche Energy Storag e Temperature Range Operating Junction Temperature Range Energy2 305 9 9 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Ther mal Resistance, Junction-ambient Value 3 65 Unit °C/W °C/W Ordering Informa tion AP09N70I-A-HF-3TB RoHS-compliant, halogen-free TO-220C.

Part

AP09N70I-A-HF-3

Description

N-channel Enhancement-mode Power MOSFET



Feature


Advanced Power Electronics Corp. AP09N7 0I-A-HF-3 N-channel Enhancement-mode P ower MOSFET Simple Drive Requirement 10 0% Avalanche Tested Fast Switching Perf ormance RoHS-compliant, halogen-free G S D BV DSS R DS(ON) ID 650V 0.75 Ω 9A Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, lo w on-resistance and .
Manufacture

Advanced Power Electronics

Datasheet
Download AP09N70I-A-HF-3 Datasheet




 AP09N70I-A-HF-3
Advanced Power
Electronics Corp.
AP09N70I-A-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
100% Avalanche Tested
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
R DS(ON)
ID
650V
0.75
9A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP09N70I-A-HF-3 is in the TO-220CFM isolated through-hole package
which is widely used in commercial and industrial applications where a
small PCB footprint or an attached isolated heatsink is required.
This device is well suited for use in high voltage applications such as
off-line AC/DC converters.
G
DS
TO-220CFM (I)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
EAS
IAR
EAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Rating
650
+ 30
9
5
40
42
0.34
305
9
9
-55 to 150
-55 to 150
Value
3
65
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
°C
°C
Unit
°C/W
°C/W
Ordering Information
AP09N70I-A-HF-3TB
RoHS-compliant, halogen-free TO-220CFM, shipped in tubes
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200903053-3 1/5
http://www.Datasheet4U.com




 AP09N70I-A-HF-3
Advanced Power
Electronics Corp.
AP09N70I-A-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BVDSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance3 VGS=10V, ID=4.5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=50V, ID=4.5A
Drain-Source Leakage Current
VDS=600V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=480V, VGS=0V
Gate-Source Leakage
Total Gate Charge3
VGS=+30V, VDS=0V
ID=9A
Gate-Source Charge
VDS=480V
Gate-Drain ("Miller") Charge
Turn-on Delay Time3
VGS=10V
VDD=300V
Rise Time
ID=9A
Turn-off Delay Time
RG=10, VGS=10V
Fall Time
RD=34
Input Capacitance
VGS=0V
Output Capacitance
VDS=25V
Reverse Transfer Capacitance
f=1.0MHz
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
Continuous Source Current (Body Diode) VD=VG=0V , VS=1.5V
Pulsed Source Current (Body Diode)1
Forward On Voltage3
Tj=25°C, IS=9A, VGS=0V
Min. Typ. Max. Units
650 - - V
- 0.6 - V/°C
- - 0.75
2 - 4V
- 4.5 -
S
- - 10 uA
- - 500 uA
- - +100 nA
- 44 - nC
- 11 - nC
- 12 - nC
- 19 - ns
- 21 - ns
- 56 - ns
-2 4 - ns
- 2660 - pF
- 170 - pF
- 10 - pF
Min. Typ. Max. Units
- - 9A
- - 40 A
- - 1.5 V
Notes:
1. Pulse width limited by maximum junction temperature.
2. Starting Tj=25o C , VDD=50V , L=6.8mH , RG=25, IAS=9A.
3. Pulse test - pulse width < 300µs , duty cycle < 2%
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5




 AP09N70I-A-HF-3
Advanced Power
Electronics Corp.
Typical Electrical Characteristics
10
T C =25 o C
8
10V
6.0V
5.0V
6
4
4.5V
2
4.0V
V G =3.5V
0
0369
12
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.2
1.1
1
0.9
0.8
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS
vs. Junction Temperature
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2009 Advanced Power Electronics Corp. USA
www.a-powerusa.com
AP09N70I-A-HF-3
10
T C =150 o C
8
6
10V
6.0V
5.0V
4.5V
4
4.0V
2 V G =3.5V
0
0 4 8 12 16 20 24
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3
I D =4.5A
V G =10V
2
1
0
-50 0 50 100
T j , Junction Temperature ( o C )
150
Fig 4. Normalized On-Resistance
vs. Junction Temperature
5
4
3
2
1
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5



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