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D-S MOSFET. Si2306BDS Datasheet

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D-S MOSFET. Si2306BDS Datasheet






Si2306BDS MOSFET. Datasheet pdf. Equivalent




Si2306BDS MOSFET. Datasheet pdf. Equivalent





Part

Si2306BDS

Description

N-Channel 30-V (D-S) MOSFET



Feature


- 0755-83307717 www.ping-web.com sale s@ping-web.com Si2306BDS Vishay Sili conix N-Channel 30-V (D-S) MOSFET PRO DUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0. 047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0 FEATURES • Halogen-free Option Available • T renchFET® Power MOSFET • 100 % Rg Te sted RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View S.
Manufacture

Vishay

Datasheet
Download Si2306BDS Datasheet


Vishay Si2306BDS

Si2306BDS; i2306BDS (L6 )* * Marking Code Ordering Information: Si2306BDS-T1-E3 (Lead (Pb) -free) Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RA TINGS TA = 25 °C, unless otherwise not ed Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Curren t Continuous Source Current (Diode Cond uction)a, b Maximum .


Vishay Si2306BDS

Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg 1 .04 1.25 0.8 - 55 to 150 4.0 3.5 20 0.6 2 0.75 0.48 W °C 5s 30 ± 20 3.16 2.7 A Steady State Unit V THERMAL RESISTAN CE RATINGS Parameter Symb Maximum Junct ion-to-Ambienta Maximum Junction-to-Foo t (Drain) Notes: a. Surf.


Vishay Si2306BDS

ace Mounted on FR4 board, t ≤ 5 s. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.c om/www/product/spice.htm Document Numbe r: 73234 S-80642-Rev. B, 24-Mar-08 www. vishay.com 1 t≤5s Steady State Steady State ol RthJA RthJF Typical 80 130 60 Maximum 100 166 75 °C.

Part

Si2306BDS

Description

N-Channel 30-V (D-S) MOSFET



Feature


- 0755-83307717 www.ping-web.com sale s@ping-web.com Si2306BDS Vishay Sili conix N-Channel 30-V (D-S) MOSFET PRO DUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0. 047 at VGS = 10 V 0.065 at VGS = 4.5 V ID (A) 4.0 3.5 Qg (Typ.) 3.0 FEATURES • Halogen-free Option Available • T renchFET® Power MOSFET • 100 % Rg Te sted RoHS COMPLIANT TO-236 (SOT-23) G 1 3 D S 2 Top View S.
Manufacture

Vishay

Datasheet
Download Si2306BDS Datasheet




 Si2306BDS
平网-功率器件专业供应商 0755-83307717 www.ping-web.com sales@ping-web.com 谭小姐
N-Channel 30-V (D-S) MOSFET
Si2306BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.047 at VGS = 10 V
30
0.065 at VGS = 4.5 V
ID (A)
4.0
3.5
Qg (Typ.)
3.0
FEATURES
Halogen-free Option Available
• TrenchFET® Power MOSFET
• 100 % Rg Tested
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2306BDS (L6 )*
* Marking Code
Ordering Information: Si2306BDS-T1-E3 (Lead (Pb)-free)
Si2306BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C
TA = 70 °C
ID
4.0 3.16
3.5 2.7
Pulsed Drain Current
IDM 20
Continuous Source Current (Diode Conduction)a, b
IS
1.04
0.62
Maximum Power Dissipationa, b
TA = 25 °C
TA = 70 °C
PD
1.25
0.8
0.75
0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter Symb
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t5s
Steady State
Steady State
Notes:
a. Surface Mounted on FR4 board, t 5 s.
b. Pulse width limited by maximum junction temperature.
c. Surface Mounted on FR4 board.
ol
RthJA
RthJF
Typical
80
130
60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
Maximum
100
166
75
Unit
°C/W
www.vishay.com
1
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 Si2306BDS
Si2306BDS平网-功率器件专业供应商 0755-83307717 www.ping-web.com sales@ping-web.com 谭小姐
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter Sy
mbol
Test Conditions
Min.
Limits
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamic
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on) V
RDS(on)
gfs
VSD
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
DS 4.5 V, VGS = 10 V
VGS = 10 V, ID = 3.5 A
VGS = 4.5 V, ID = 2.8 A
VDS = 4.5 V, ID = 2.5 A
IS = 1.25 A, VGS = 0 V
30
1.0 3.0
± 100
0.5
10
6A
0.038 0.047
0.052 0.065
7.0
0.8 1.2
V
nA
µA
Ω
S
V
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Qg
Qgt
Qgs
Qgd
Rg
Ciss
Coss
Crss
VDS = 15 V, VGS = 5 V, ID = 2.5 A
VDS = 15 V, VGS = 10 V, ID = 2.5 A
f = 1.0 MHz
VDS = 15 V, VGS = 0 V, f = 1 MHz
2.557
3.0
6
1.6
0.6
305
65
29
4.5
9
.5
nC
Ω
pF
Turn-On D elay T ime
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Notes:
a. Pulse test: Pulse width 300 µs, duty cycle 2 %.
VDD = 15 V, RL = 15 Ω
ID 1 A, VGEN = 10 V, Rg = 6 Ω
IF = 1.25 A, di/dt = 100 A/µs
7 11
12 18
14 25
61 0
14 21
61 0
ns
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
VGS = 10 thru 5 V
20
16 4 V 16
12 12
8
4
0
0
www.vishay.com
2
3V
12345
VDS - Drain-to-Source Voltage (V)
Output Characteristics
6
8
TC = 125 °C
4
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 73234
S-80642-Rev. B, 24-Mar-08




 Si2306BDS
平网-功率器件专业供应商 0755-83307717 www.ping-web.com sales@ping-web.com 谭小姐
Si2306BDS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
400
0.08
350
300
0.06
0.04
VGS = 4.5 V
VGS = 10 V
250
200
150
0.02
100
50
0.00
0 2 4 6 8 10 12 14 16
0
0
ID - Drain Current (A)
On-Resistance vs. Drain Current
Ciss
Crss
Coss
5 10 15 20 25
VDS - Drain-to-Source Voltage (V)
Capacitance
30
10
VDS = 15 V
ID = 3.5 A
8
1.6
VGS = 10 V
ID = 3.5 A
1.4
6 1.2
4 1.0
2 0.8
0
0123456
Qg - Total Gate Charge (nC)
Gate Charge
10
TJ = 150 °C
1
TJ = 25 °C
0.6
- 50 - 25
0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.5
0.4
ID = 3.5 A
0.3
0.2
0.1
0.1
0.0
0.2 0.4 0.6 0.8 1.0
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.2
0.0
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73234
S-80642-Rev. B, 24-Mar-08
www.vishay.com
3



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