Power MOSFET. STK0825F Datasheet

STK0825F MOSFET. Datasheet pdf. Equivalent

Part STK0825F
Description Advanced Power MOSFET
Feature Semiconductor STK0825F Advanced Power MOSFET DC-DC CONVERTER APPLICATION HIGH VOLTAGE SWITCHING AP.
Manufacture AUK
Datasheet
Download STK0825F Datasheet



STK0825F
Semiconductor
DC-DC CONVERTER APPLICATION
HIGH VOLTAGE SWITCHING APPLICATIONS
Features
High Voltage: BVDSS=250V(Min.)
Low Crss : Crss=13pF(Typ.)
Low gate charge : Qg=15nC(Typ.)
Low RDS(on) :RDS(on)=0.43Ω(Max.)
Ordering Information
Type NO.
Marking
STK0825F
STK0825
STK0825F
Advanced Power MOSFET
Package Code
TO-220F-3L
Outline Dimensions
unit : mm
9.80~10.20
Φ3.05~3.35
2.60~3.00
1.07 Min.
0.90 Max.
2.54 Typ.
2.54 Typ.
123
KSD-T0O007-002
0.60 Max.
PIN Connections
1. Gate
2. Drain
3. Source
1



STK0825F
STK0825F
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed) *
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Symbol
VDSS
VGSS
(Tc=25)
ID (Tc=100)
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
Rating
250
±30
8
5.6
32
25
8
285
8
7.4
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
Rth(J-C)
Rth(J-a)
Typ.
-
-
Max
5.0
62.5
(Tc=25°C)
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Unit
/W
KSD-T0O007-002
2





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