Power-Transistor. IPI22N03S4L-15 Datasheet

IPI22N03S4L-15 Power-Transistor. Datasheet pdf. Equivalent

Part IPI22N03S4L-15
Description Power-Transistor
Feature IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS®-T2 Power-Transistor Product Summary V DS R .
Manufacture Infineon Technologies
Datasheet
Download IPI22N03S4L-15 Datasheet



IPI22N03S4L-15
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB22N03S4L-15
IPI22N03S4L-15, IPP22N03S4L-15
Product Summary
V DS
R DS(on),max (SMD version)
ID
30 V
14.6 m
22 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB22N03S4L-15
IPI22N03S4L-15
IPP22N03S4L-15
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N03L15
4N03L15
4N03L15
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=22 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
22
22
88
20
22
±16
31
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 2.0
page 1
2007-03-09



IPI22N03S4L-15
IPB22N03S4L-15
IPI22N03S4L-15, IPP22N03S4L-15
Parameter
Symbol
Conditions
min.
Values
typ.
Unit
max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction -
ambient, leaded
R thJA
- - 4.9 K/W
- - 62
SMD version, device on PCB
R thJA
minimal footprint
6 cm2 cooling area3)
-
-
- 62
- 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=10 µA 1.0 1.5 2.2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V,
T j=25 °C
-
0.01
1 µA
V DS=30 V, V GS=0 V,
T j=125 °C2)
-
10 1000
V DS=18 V, V GS=0 V,
T j=85 °C2)
-
5 60
Gate-source leakage current
I GSS
V GS=16 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=11 A
- 17.5 19.8 m
V GS=4.5 V, I D=11 A,
SMD version
-
17.2 19.5
V GS=10 V, I D=22 A
V GS=10 V, I D=22 A,
SMD version
- 12.7 14.9
- 12.4 14.6
Rev. 2.0
page 2
2007-03-09





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