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FLM5964-12F

C-Band Internally Matched FET

Description

FLM5964-12F FEATURES High Output Power: P1dB = 41.5dBm (Typ.) High Gain: G1dB = 10.0dB (Typ.) High PAE: ηadd = 37% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed Package C-Band Internally Matched FET DESCRIPTION The FLM5964-12F is a power GaAs FET that is internally matched f...

SUMITOMO

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