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PHN210T

Part Number	PHN210T
Manufacturer	NXP
Description	Dual N-channel TrenchMOS intermediate level FET
Published	Aug 18, 2014
Detailed Description	PHN210T Dual N-channel TrenchMOS intermediate level FET Rev. 02 — 15 December 2010 Product data sheet 1. Product profil...
Datasheet	PHN210T PDF File

Overview

PHN210T Dual N-channel TrenchMOS intermediate level FET Rev.
02 — 15 December 2010 Product data sheet 1.
Product profile 1.
1 General description Dual intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.
2 Features and benefits  Suitable for high frequency applications due to fast switching characteristics  Suitable for logic level gate drive sources  Suitable for low gate drive sources 1.
3 Applications  DC-to-DC converters  Logic level translators  Motor and relay drivers 1.
4 Quick reference...

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