K1446 Datasheet: 2SK1446





K1446 2SK1446 Datasheet

Part Number K1446
Description 2SK1446
Manufacture Sanyo Semicon Device
Total Page 4 Pages
PDF Download Download K1446 Datasheet PDF

Features: Ordering number:EN3449A N-Channel Silic on MOSFET 2SK1446 Ultrahigh-Speed Switc hing Applications Features · Low ON-s tate resistance. · Ultrahigh-speed swi tching. · Micaless package facilitatin g easy mounting. Package Dimensions u nit:mm 2078B [2SK1446] 10.0 3.2 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolu te Maximum Ratings at Ta = 25˚C Param eter Drain-to-Source Voltage Gate-to-So urce Voltage Drain Current (DC) Drain C urrent (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Chan nel Temperature Storage Temperature Tc h Tstg 2.55 Conditions PW≤10µs, dut y cycle≤1% Tc=25°C Electrical Chara cteristics at Ta = 25˚C Parameter Sy mbol Conditions Drain-to-Source Break down Voltage V(BR)DSS ID=1mA, VGS=0 Z ero-Gate Voltage Drain Current IDSS VD S=450V, VGS=0 Gate-to-Source Leakage C urrent IGSS VGS=±30V, VDS=0 Cutoff V oltage VGS(off) VDS=10V, ID=1mA Forwa rd Transfer Admittance | yfs | VDS=10V, ID=4A Static Drain-to-Source ON-S.

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Ordering number:EN3449A
N-Channel Silicon MOSFET
2SK1446
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2078B
[2SK1446]
10.0
3.2
4.5
2.8
0.9
1.2
0.75
1 23
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
2.55
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=4A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=4A, VGS=10V
(Note) Be careful in handling the 2SK1446 because it has no protection diode between gate and source.
2.55
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI (LS)
Ratings
450
±30
7
28
2.0
35
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
450 V
1.0 mA
±100 nA
2.0 3.0 V
3.0 6.0
S
0.6 0.8
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TH (KT)/72597TS (KOTO)/7151JN (KOTO) No.3449–1/4

           






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