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TJ150F06M3L

Toshiba Semiconductor

MOSFETs


Description
TJ150F06M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ150F06M3L 1. Applications Relay Drivers Motor Drivers 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circui...



Toshiba Semiconductor

TJ150F06M3L

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