HAT2036R
Silicon N Channel Power MOS FET Power Switching
ADE-208-665B(Z) Target specification 3rd. Edition May 1998 Features
Low on-resistance R DS(on) =12mΩ typ Capable of 4.5 V gate drive Low drive current High density mounting High speed switching tf=60ns typ.
Outline
SOP–8
8 5 7 6
5 6 7 8 D D D D
3 1 2
4
4 G
1, 2, 3 Source 4 Gate 5, 6, 7...
