AS4LC1M16E5
®
3V 1M×16 CMOS DRAM (EDO)
Features
Organization: 1,048,576 words × 16 bits High speed
- 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time Low power consumption - Active: 500 mW max (-60) - Standby: 3.6 mW max, CMOS DQ Extended data out 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-b...
