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2SD818

Part Number	2SD818
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Nov 27, 2014
Detailed Description	isc Silicon NPN Power Transistor 2SD818 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·...
Datasheet	2SD818 PDF File

Overview

isc Silicon NPN Power Transistor 2SD818 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.
) ·Low Collector Saturation Voltage·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for color TV horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2.
5 A IE Emitter Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 2.
5 A 50 W 150 ℃ Tstg Storage Temperature Range...

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