DatasheetsPDF.com

GT50J325

Toshiba Semiconductor
Part Number GT50J325
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Mar 23, 2005
Detailed Description GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fa...
Datasheet PDF File GT50J325 PDF File

GT50J325
GT50J325

Overview
GT50J325 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J325 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth generation IGBT • Enhancement mode type • Fast switching (FS): Operating frequency up to 50 kHz (reference) • High speed: tf = 0.
05 μs (typ.
) • Low switching loss: Eon = 1.
30 mJ (typ.
) : Eoff = 1.
34 mJ (typ.
) • Low saturation Voltage: VCE (sat) = 2.
0 V (typ.
) • FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Emitter-collector forward current DC 1 ms Collector power dissipation (Tc = 25°C) Junction te...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)