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FDC365P

P-Channel PowerTrench MOSFET

Description

FDC365P P-Channel PowerTrench® MOSFET FDC365P P-Channel PowerTrench® MOSFET -35V, -4.3A, 55mΩ Features Max rDS(on) = 55mΩ at VGS = -10V, ID = -4.2A Max rDS(on) = 80mΩ at VGS = -4.5V, ID = -3.2A RoHS Compliant November 2007 tm General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technolog...

Fairchild Semiconductor

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