2SC1980. C1980 Datasheet

C1980 2SC1980. Datasheet pdf. Equivalent

C1980 Datasheet
Recommendation C1980 Datasheet
Part C1980
Description 2SC1980
Feature C1980; Transistors 2SC1980 Silicon NPN epitaxial planar type For high breakdown voltage low-noise amplific.
Manufacture Panasonic Semiconductor
Datasheet
Download C1980 Datasheet




Panasonic Semiconductor C1980
Transistors
2SC1980
Silicon NPN epitaxial planar type
For high breakdown voltage low-noise amplification
Complementary to 2SA0921
5.0±0.2
Unit: mm
4.0±0.2
Features
High collector-emitter voltage (Base open) VCEO
Low noise voltage NV
0.7±0.1
Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
120
V
c type Collector-emitter voltage (Base open) VCEO
120
V
n d ge. ed Emitter-base voltage (Collector open) VEBO
7
V
le sta ntinu Collector current
IC
20
mA
a e cyc isco Peak collector current
ICP
50
mA
life d, d Collector power dissipation
PC
250
mW
n u duct type Junction temperature
Tj
150
°C
te tin Pro ued Storage temperature
Tstg 55 to +150 °C
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Emitter
2: Collector
3: Base
TO-92-B1 Package
in n es follopwlianngefdoudriscontin Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
120
V
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
120
V
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
7
V
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
1
µA
inten ance Forward current transfer ratio *
hFE VCE = 5 V, IC = 2 mA
180
700
Ma inten Collector-emitter saturation voltage
VCE(sat) IC = 20 mA, IB = 2 mA
0.6
V
ma Transition frequency
fT
VCB = 5 V, IE = −2 mA, f = 200 MHz
200
MHz
(planed Noise voltage
NV VCE = 40 V, IC = 1 mA, GV = 80 dB
Rg = 100 k, Function = FLAT
150 mV
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
180 to 360 260 to 520 360 to 700
Publication date: March 2003
SJC00109BED
1



Panasonic Semiconductor C1980
2SC1980
PC Ta
500
IC VCE
24
Ta = 25°C
IC VBE
60
VCE = 10 V
400
20
IB = 50 µA
45 µA
50
25°C
40 µA
Ta = 75°C
25°C
16
40
35 µA
300
30 µA
12
30
25 µA
200
20 µA
8
20
15 µA
100
0
0
40 80 120 160 200
Ambient temperature Ta (°C)
4
10 µA
5 µA
0
0 2 4 6 8 10 12
Collector-emitter voltage VCE (V)
10
0
0 0.4 0.8 1.2 1.6 2.0
Base-emitter voltage VBE (V)
ce/ 100
an ed 10
n u 1
te tin 0.1
in n 0.01
a o 0.1
M isc 8
D 6
4
pe) VCE(sat) IC
e. d ty IC / IB = 10
g four Pcroondtiuncutelidfetcyypceled,sdtaisgcontinue 25°C
Ta = 75°C
llowin d dis 25°C
cludes fpoe, plane 1
10
100
d in e ty Collector current IC (mA)
hFE IC
1 200
VCE = 10 V
1 000
800
Ta = 75°C
600
25°C
25°C
400
200
0
0.1
1
10
100
Collector current IC (mA)
fT IE
800
VCB = 5 V
Ta = 25°C
600
400
200
0
0.1
1
10
100
Emitter current IE (mA)
/Discontimnuaeintenanc Cob VCB
ance type, IE = 0
n e f = 1 MHz
(planeMd aminatientenanc Ta = 25°C
NV IC
160
VCE = 10 V
GV = 80 dB
Function = FLAT
120
Rg = 100 k
80
22 k
2
40
4.7 k
0
1
10
100
Collector-base voltage VCB (V)
0
0.01
0.1
1
Collector current IC (mA)
2
SJC00109BED



Panasonic Semiconductor C1980
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