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GLT5640AL16

ETC

4M X 16 CMOS Synchronous Dynamic RAM


Description
GLT5160L16 16M (2-Bank x 524288-Word x 16-Bit) Synchronous DRAM ADVANCED FEATURES u Single 3.3 V ±0.3 V power supply u Clock frequency 100 MHz / 125 MHz / 143 MHz/ 166 MHz u Fully synchronous operation referenced to clock rising edge u Dual bank operation controlled by BA (Bank Address) u CAS latency- 2 / 3 (programmable) u Burst length- 1 / 2 / 4 / 8 & Fu...



ETC

GLT5640AL16

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