K1847 Datasheet: 2SK1847





K1847 2SK1847 Datasheet

Part Number K1847
Description 2SK1847
Manufacture Sanyo
Total Page 3 Pages
PDF Download Download K1847 Datasheet PDF

Features: Ordering number:EN4505 N-Channel Silico n MOSFET 2SK1847 Ultrahigh-Speed Switch ing Applications Features · Low ON re sistance. · Ultrahigh-speed switching. · Low-voltage drive. Package Dimensi ons unit:mm 2091A [2SK1847] 0.4 3 0.1 6 0 to 0.1 0.5 1.5 0.5 2.5 1 0.95 0. 95 2 1.9 2.9 Specifications Absolute Maximum Ratings at Ta = 25˚C Paramete r Drain-to-Source Voltage Gate-to-Sourc e Voltage Drain Current (DC) Drain Curr ent (pulse) Allowable Power Dissipation Channel Temperature Storage Temperatur e Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta = 25 C Conditions PW≤10µs, duty cycle 1% Parameter Drain-to-Source Breakdow n Voltage Zero-Gate Votlage Drain Curre nt Gate-to-Source Leakage Current Cutof f Voltage Forward Transfer Admittance S tatic Drain-to-Source On-State Resistan ce Marking : KJ Symbol Conditions V( BR)DSS IDSS IGSS VGS(off) | yfs | RDS(o n)1 RDS(on)2 ID=1mA, VGS=0 VDS=30V, VG S=0 VGS=±12V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=250mA ID=250mA, VGS=10V I.

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Ordering number:EN4505
N-Channel Silicon MOSFET
2SK1847
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
Package Dimensions
unit:mm
2091A
[2SK1847]
0.4
3
0.16
0 to 0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
PW10µs, duty cycle1%
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Votlage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : KJ
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±12V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=250mA
ID=250mA, VGS=10V
ID=250mA, VGS=4V
1 : Gate
2 : Source
3 : Drain
SANYO : CP
Ratings
30
±15
500
2
250
150
–55 to +150
Unit
V
V
mA
A
mW
˚C
˚C
Ratings
min typ max
Unit
30 V
10 µA
±10 µA
1.0 2.0 V
350 700
mS
0.5 0.75
0.75 1.1
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62199TH (KT)/51694TH (KOTO) AX-7823 No.4505–1/3

        






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