Bipolar Transistors. 2N2222 Datasheet

2N2222 Transistors. Datasheet pdf. Equivalent

Part 2N2222
Description Low Power Bipolar Transistors
Feature 2N2222 Low Power Bipolar Transistors Features: • NPN Silicon Planar Switching Transistors. • Switchi.
Manufacture Multicomp
Datasheet
Download 2N2222 Datasheet



2N2222
2N2222
Low Power Bipolar Transistors
Features:
NPN Silicon Planar Switching Transistors.
Switching and Linear application DC and VHF Amplifier applications.
TO-18 Metal Can Package
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Minimum Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76
- 1.27
- 2.97
0.91 1.17
0.71 1.21
12.70
-
45°
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
Page 1
06/04/06 V1.0



2N2222
2N2222
Low Power Bipolar Transistors
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise)
Description
Symbol
2N2222
Collector Emitter Voltage
VCEO
30
Collector Base Voltage
VCBO
60
Emitter Base Voltage
VEBO
5
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
IC 800
500
PD
2.28
1.2
6.85
Operating and Storage Junction Temperature Range
TJ, Tstg
-65 to +200
Unit
V
mA
mW
mW/°C
W
mW/°C
°C
Electrical Characteristics (Ta = 25°C unless specified otherwise)
Description
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Symbol
BVCEO
BVCBO
VEBOf
Test Condition
IC = 10mA, IB = 0
IC = 10µA, IE = 0
IE = 10µA, IC = 0
Value
Minimum
Maximum
30 -
60 -
5-
Collector Leakage Current
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICBO
VCB = 50V, IE = 0
VCB = 50V, IE = 0
Ta = 150°C
*VCE (Sat)
*VBE (Sat)
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
-
-
0.6
10
10
0.4
1.6
1.3
2.6
Unit
V
nA
µA
V
Page 2
06/04/06 V1.0





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