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2SD111

Part Number	2SD111
Manufacturer	INCHANGE
Description	Silicon NPN Power Transistor
Published	Feb 18, 2015
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC...
Datasheet	2SD111 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25℃ ·High Current Capability- : IC = 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 10 A IE Emitter Current-Continuous 10 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg ...

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