G30N60HS Datasheet PDF Download, Infineon





(PDF) G30N60HS Datasheet Download

Part Number G30N60HS
Description High Speed IGBT
Manufacture Infineon
Total Page 12 Pages
PDF Download Download G30N60HS Datasheet PDF

Features: SGP30N60HS SGW30N60HS High Speed IGBT i n NPT-technology • 30% lower Eoff co mpared to previous generation • Short circuit withstand time – 10 µs • Designed for operation above 30 kHz NPT-Technology for 600V applications offers: - parallel switching capabilit y - moderate Eoff increase with tempera ture - very tight parameter distributio n PG-TO-220-3-1 • High ruggedness, temperature stable behaviour • Pb-fre e lead plating; RoHS compliant • Qual ified according to JEDEC1 for target ap plications • Complete product spectru m and PSpice Models : http://www.infine on.com/igbt/ C G E PG-TO-247-3 Type VCE IC Eoff) Tj Marking Package SGP30 N60HS 600V 30 480µJ 150°C G30N60HS P G-TO-220-3-1 SGW30N60HS 600V 30 480 J 150°C G30N60HS PG-TO-247-3 Maximum Ratings Parameter Symbol Value Col lector-emitter voltage DC collector cur rent TC = 25°C TC = 100°C Pulsed coll ector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A, .

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SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
30% lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for operation above 30 kHz
NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
VCE IC Eoff) Tj Marking
Package
SGP30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS
600V
30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 600V, Tj 150°C
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25
start TJ=25°C
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
Short circuit withstand time2)
VGE = 15V, VCC 600V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
EAS
VGE
tSC
Ptot
Tj ,
Tstg
Tj(tl)
-
600
41
30
112
112
165
±20
±30
10
250
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov 09

                    
              






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