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HD8205-LOW

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N-Channel Enhancement Mode Power MOSFET


Description
HD8205-LOW N-Channel Enhancement Mode Power MOSFET Description The 8205-LOW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V ...



HI-DEVICE

HD8205-LOW

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