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2N03L05
Power-Transistor
Description
OptiMOS® Power-
Transistor
Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated P- TO262 -3-1 SPI80N03S2L-05 SPP80N03S2L-05,SPB80N03S2L-05 Product Summary VDS RDS(on) ID 30 V 5.2 mΩ 80 A P- TO263 -3-2 P- TO220 -3-1...
Infineon Technologies
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