http://www.ncepower.com
Pb Free Product
NCE55H11
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V
(Typ:4.5mΩ)
Schematic diagram
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