NCE6003 Datasheet PDF


Part Number

NCE6003

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
PDF Download
Download NCE6003 Datasheet PDF


Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6003 NCE N-Channel Enhancement Mod e Power MOSFET DESCRIPTION The NCE6003 uses advanced trench technology to pro vide excellent RDS(ON), low gate charge and operation with gate voltages as lo w as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURE S ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.5V ● High Power and current handing capa bility ● Lead free product is acquire d ● Surface Mount Package D G S Sche matic diagram Marking and pin Assignmen t Application ●Battery Switch ●DC/ DC Converter SOT-23 -3L top view Pack age Marking And Ordering Information Device Marking.
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NCE6003 Datasheet
http://www.ncepower.com
Pb Free Product
NCE6003
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE6003 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
GENERAL FEATURES
VDS =60V,ID =3A
RDS(ON) <105m@ VGS=10V
RDS(ON) < 125m@ VGS=4.5V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
Battery Switch
DC/DC Converter
SOT-23 -3L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
6003
NCE6003
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
60
±20
3
10
1.7
-55 To 150
73.5
Unit
V
V
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 -
-
V
- - 1 μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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