NCE6005R Datasheet PDF


Part Number

NCE6005R

Description

NCE N-Channel Enhancement Mode Power MOSFET

Manufacture

NCE Power

Total Page 7 Pages
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Features Datasheet pdf http://www.ncepower.com Pb Free Product NCE6005R NCE N-Channel Enhancement Mo de Power MOSFET Description The NCE600 5R uses advanced trench technology and design to provide excellent RDS(ON) wit h low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) < 45mΩ @ VGS=10V (Typ:38mΩ) D G S Schematic diagram Application ● Power switching application ● Hard s witched and high frequency circuits ● Uninterruptible power supply SOT-223- 3L view Package Marking and Ordering I nformation Device Marking Device Dev ice Package NCE6005R NCE6005R SOT-22 3-3L Reel Size Ø330mm Tape width 12m m Quantity 2500 units Absolute Maximum Ratings (TA=25.
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NCE6005R Datasheet
http://www.ncepower.com
Pb Free Product
NCE6005R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =60V,ID =5A
RDS(ON) < 45m@ VGS=10V
Typ38m
D
G
S
Schematic diagram
Application
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6005R
NCE6005R
SOT-223-3L
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
Limit
60
±20
5
3.5
20
2
-55 To 150
62.5
Unit
V
V
A
A
A
W
/W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS VDS=60V,VGS=0V
Min Typ Max Unit
60 69
--
-
1
V
μA
Wuxi NCE Power Semiconductor Co., Ltd
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