K1425 Datasheet: 2SK1425





K1425 2SK1425 Datasheet

Part Number K1425
Description 2SK1425
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1425 Datasheet PDF

Features: Ordering number:EN3563 N-Channel Silico n MOSFET 2SK1425 Ultrahigh-Speed Switch ing Applications Features · Low ON-st ate resistance. · Ultrahigh-speed swit ching. · Converters. · Micaless packa ge facilitating easy mounting. Package Dimensions unit:mm 2076B 16.0 3.4 [2SK1425] 5.6 3.1 5.0 8.0 22.0 2.0 2 1.0 4.0 2.8 2.0 1.0 123 Specificatio ns Absolute Maximum Ratings at Ta = 25 ˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (D C) Drain Current (Pulse) Symbol VDSS V GSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Tempe rature Tch Tstg 5.45 Conditions PW≤ 10µs, duty cycle≤1% Tc=25°C Electr ical Characteristics at Ta = 25˚C 5.4 5 Parameter Symbol Conditions Drain -to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 Gate-to-S ource Leakage Current IGSS VGS=±20V, VDS=0 Cutoff Voltage VGS(off) VDS=10V , ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=50A Static Drain.

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Ordering number:EN3563
N-Channel Silicon MOSFET
2SK1425
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
· Micaless package facilitating easy mounting.
Package Dimensions
unit:mm
2076B
16.0
3.4
[2SK1425]
5.6
3.1
2.8
2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
5.45
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=60V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±20V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=50A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=50A, VGS=10V
(Note) Be careful in handling the 2SK1425 because it has no protection diode between gate and source.
2.0
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
Ratings
60
±20
60
240
80
3.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
60 V
100 µA
±100 nA
1.5 2.5 V
30 50
S
0.012 0.016
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3563–1/4

           






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