K1451 Datasheet: 2SK1451





K1451 2SK1451 Datasheet

Part Number K1451
Description 2SK1451
Manufacture Sanyo
Total Page 4 Pages
PDF Download Download K1451 Datasheet PDF

Features: Ordering number:EN3454 N-Channel Silico n MOSFET 2SK1451 Ultrahigh-Speed Switch ing Applications Features · Low ON-st ate resistance. · Ultrahigh-speed swit ching. · Converters. · Micaless packa ge facilitating mounting. Package Dime nsions unit:mm 2076B 16.0 3.4 [2SK1 451] 5.6 3.1 5.0 8.0 22.0 2.0 21.0 4 .0 2.8 2.0 1.0 123 Specifications A bsolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate- to-Source Voltage Drain Current (DC) Dr ain Current (Pulse) Symbol VDSS VGSS I D IDP Allowable Power Dissipation PD Channel Temperature Storage Temperatur e Tch Tstg 5.45 Conditions PW≤10µs , duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 5.45 Pa rameter Symbol Conditions Drain-to-S ource Breakdown Voltage V(BR)DSS ID=1m A, VGS=0 Zero-Gate Voltage Drain Curre nt IDSS VDS=450V, VGS=0 Gate-to-Sourc e Leakage Current IGSS VGS=±30V, VDS= 0 Cutoff Voltage VGS(off) VDS=10V, ID =1mA Forward Transfer Admittance | yfs | VDS=10V, ID=4A Static Drain-to-S.

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Ordering number:EN3454
N-Channel Silicon MOSFET
2SK1451
Ultrahigh-Speed Switching Applications
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
· Micaless package facilitating mounting.
Package Dimensions
unit:mm
2076B
16.0
3.4
[2SK1451]
5.6
3.1
2.8
2.0
1.0
123
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Symbol
VDSS
VGSS
ID
IDP
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
5.45
Conditions
PW10µs, duty cycle1%
Tc=25°C
Electrical Characteristics at Ta = 25˚C
5.45
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS ID=1mA, VGS=0
Zero-Gate Voltage Drain Current
IDSS VDS=450V, VGS=0
Gate-to-Source Leakage Current
IGSS VGS=±30V, VDS=0
Cutoff Voltage
VGS(off) VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs | VDS=10V, ID=4A
Static Drain-to-Source ON-State Resistance
RDS(on) ID=4A, VGS=10V
(Note) Be careful in handling the 2SK1451 because it has no protection diode between gate and source.
2.0
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
Ratings
450
±30
8
32
50
3.0
150
–55 to +150
Unit
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
450 V
1.0 mA
±100 nA
2.0 3.0 V
3.0 6.0
S
0.6 0.8
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61099TH (KT)/6131JN (KOTO) X-6827, 8035 No.3454–1/4

           






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