K1310A Datasheet: N-CHANNEL MOS TYPE TRANSISTOR





K1310A N-CHANNEL MOS TYPE TRANSISTOR Datasheet

Part Number K1310A
Description N-CHANNEL MOS TYPE TRANSISTOR
Manufacture Toshiba Semiconductor
Total Page 5 Pages
PDF Download Download K1310A Datasheet PDF

Features: 2SK1310A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1310A R F POWER MOS FET for VHF TV BROADCAST TR ANSMITTER z Output Power : Po ≥ 190 W (Min.) z Drain Efficiency : ηD = 65% (Typ.) z Frequency : f = 230 MHz z Push−Pull Structure Package Unit in mm ABSOLUTE MAXIMUM RATINGS (Tc = 2 5°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Reverse Drain Cur rent Drain Power Dissipation Channel Te mperature Storage Temperature Range VD SS VGSS ID IDR PD Tch Tstg 100 ±20 12 12 250 150 −55~150 V V A A W °C ° C Note: Using continuously under heavy loads (e.g. the application of high J EDEC — temperature/current/voltage and the significant change in EIAJ temperature, etc.) may cause this pr oduct to decrease in the TOSHIBA 2− 22C2A reliability significantly even i f the operating conditions (i.e. operat ing temperature/current/voltage, etc.) are within the absolute maximum Weight: 17.5 g ratings. Please design the app.

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2SK1310A
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK1310A
RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
z Output Power
: Po 190 W (Min.)
z Drain Efficiency
: ηD = 65% (Typ.)
z Frequency
: f = 230 MHz
z PushPull Structure Package
Unit in mm
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Reverse Drain Current
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
IDR
PD
Tch
Tstg
100
±20
12
12
250
150
55~150
V
V
A
A
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
temperature/current/voltage and the significant change in
EIAJ
temperature, etc.) may cause this product to decrease in the
TOSHIBA
222C2A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 17.5 g
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2007-11-01

              






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