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HFP4N60 Datasheet, Equivalent, N-Channel MOSFET.N-Channel MOSFET N-Channel MOSFET |
| Part | HFP4N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu. |
| Manufacture | SemiHow |
| Datasheet |
| Part | HFP4N60 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | HFP4N60 June 2005 HFP4N60 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ ȍ ID = 4.0 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ 7S #9GS=10V 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Cu. |
| Manufacture | SemiHow |
| Datasheet |
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