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HFS830

N-Channel MOSFET

Description

HFS830 Dec 2005 HFS830 500V N-Channel MOSFET BVDSS = 500 V RDS(on) typ = 1.2 Ω ID = 4.5 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 18 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1...

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