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2SC2510

Silicon NPN POWER TRANSISTOR

Description

HG Semiconductors 2SC2510HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150W PEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD = 30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage ...

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