2SB1375 Transistor Datasheet

2SB1375 Datasheet PDF, Equivalent


Part Number

2SB1375

Description

Silicon PNP Triple Diffused Type Transistor

Manufacture

GME

Total Page 4 Pages
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Download 2SB1375 Datasheet PDF


2SB1375
Silicon PNP Triple Diffused Type
FEATURES
Low Saturation Voltage:VCE(sat)=-1.5V(max.)
(IC/IB=-2A/-0.2A)
Pb
High Power Dissipation:PC=25W(TC=25) Lead-free
Complements the 2SD2012.
Production specification
2SB1375
TO-220AB
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter
Value
Unit
VCBO
Collector-Base Voltage
-60 V
VCEO
VEBO
IC
IB
PC
Tj,Tstg
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation
Ta=25
Tc=25
Junction and Storage Temperature
-60 V
-7 V
-3 A
-0.5 A
2.0
W
25
-55 to +150
X015
Rev.A
www.gmesemi.com
1

2SB1375
Production specification
Silicon PNP Triple Diffused Type
2SB1375
ELECTRICAL CHARACTERISTICS Ratings at 25ambient temperature unless otherwise specified.
Parameter
Symbol Test conditions MIN TYP MAX UNIT
Collector-emitter Breakdown Voltage V(BR)CEO IC=-50mA,IB=0
-60
V
Collector Cut-off Current
ICBO VCB=-60V,IE=0
-10 μA
Emitter Cut-off Current
IEBO
DC Current Gain
hFE
Collector-emitter Saturation Voltage VCE(sat)
VEB=-7V,IC=0
-10
VCE=-5V,IC=-0.5A
VCE=-5V,IC=-2A
100
15
320
IC=-2A, IB=-0.2A
-1.0 -1.5
μA
V
Base-emitter Voltage
VBE IC=-0.5A, VCE=-5V
-0.75 -1.0
V
Transition Frequency
Collector Output Capacitance
fT VCE=-5V, IE=-0.5A
VCB=-10V,IE=0,f=1
Cob MHz
9
50
MHz
pF
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
X015
Rev.A
www.gmesemi.com
2


Features Silicon PNP Triple Diffused Type FEATUR ES  Low Saturation Voltage:VCE(sat) =-1.5V(max.) (IC/IB=-2A/-0.2A) Pb High Power Dissipation:PC=25W(TC=25 ) Lead-free  Complements the 2SD20 12. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temp erature range applies unless otherwise specified Symbol Parameter Value Uni t VCBO Collector-Base Voltage -60 V VCEO VEBO IC IB PC Tj,Tstg Collector- Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collec tor Dissipation Ta=25℃ Tc=25℃ Jun ction and Storage Temperature -60 V -7 V -3 A -0.5 A 2.0 W 25 -55 to +150 ℃ X015 Rev.A www.gmesemi.com 1 Produc tion specification Silicon PNP Triple Diffused Type 2SB1375 ELECTRICAL CHAR ACTERISTICS Ratings at 25℃ ambient te mperature unless otherwise specified. Parameter Symbol Test conditions MIN T YP MAX UNIT Collector-emitter Breakdow n Voltage V(BR)CEO IC=-50mA,IB=0 -60 V Collector Cut-off Current ICBO VCB=-60V,IE=0 -10 μA Emit.
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