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2SB1375

GME

Silicon PNP Transistor


Description
Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb  High Power Dissipation:PC=25W(TC=25℃) Lead-free  Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collect...



GME

2SB1375

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