DatasheetsPDF.com

BLV840

Part Number	BLV840
Manufacturer	BELLING
Description	N-Channel Enhancement Mode Power MOSFET
Published	Jul 19, 2015
Detailed Description	BLV840 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirement...
Datasheet	BLV840 PDF File

Overview

BLV840 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 500V 0.
85Ω 8.
0A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply.
Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Oper...

Similar Datasheet

BLV830 N-Channel Enhancement Mode Power MOSFET - BELLING
BLV840 N-Channel Enhancement Mode Power MOSFET - BELLING
BLV857 UHF linear push-pull power transistor - NXP
BLV859 UHF linear push-pull power transistor - NXP
BLV861 UHF linear push-pull power transistor - NXP
BLV862 UHF linear push-pull power transistor - NXP
BLV88N30 N-Channel Enhancement Mode Power MOSFET - BELLING
BLV897 UHF push-pull power transistor - NXP

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)