TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSF01S30SC
DSF01S30SC
High-Speed Switching Application
Unit: mm
0.1 9±0.02
Abusolute Maximum Ratings (Ta = 25°C)
２
0.025±0.015
0.62 ±0.03 0.3 8
Characteristic
Symbol
Rating
Unit
Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range
VR IO ...
