FDD4N60NZ II MOSFET Datasheet

FDD4N60NZ Datasheet, PDF, Equivalent


Part Number

FDD4N60NZ

Description

N-Channel UniFET II MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
Datasheet
Download FDD4N60NZ Datasheet


FDD4N60NZ
FDD4N60NZ
N-Channel UniFETTM II MOSFET
600 V, 3.4 A, 2.5 Ω
Features
• RDS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A
• Low Gate Charge (Typ. 8.3 nC)
• Low Crss (Typ. 3.7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
November 2013
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFETTM II MOSFET to withstand over 2kV HBM surge
stress. This device family is suitable for switching power con-
verter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp bal-
lasts.
D
G
S
D
D-PAK
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2012 Fairchild Semiconductor Corporation
FDD4N60NZ Rev. C1
1
FDD4N60NZ
600
±25
3.4
2
13.6
179.2
3.4
11.4
5
114
0.9
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDD4N60NZ
1.1
110
Unit
oC/W
www.fairchildsemi.com

FDD4N60NZ
Package Marking and Ordering Information
Part Number
FDD4N60NZ
Top Mark
FDD4N60NZ
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±25 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 1.7 A
VDS = 20 V, ID = 1.7 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V ID = 3.4 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 3.4 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 3.4 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 3.4 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 31 mH, IAS = 3.4 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 3.4 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
-
-
1.9
3.4
385
40
3.7
8.3
2.1
3.3
12.7
15.1
30.2
12.8
-
-
-
168
0.7
Max. Unit
-V
- V/oC
50
100
μA
±10 μA
5.0 V
2.5 Ω
-S
510
60
5
10.8
-
-
pF
pF
pF
nC
nC
nC
35.4
40.2
70.4
35.6
ns
ns
ns
ns
3.4 A
13.6 A
1.4 V
- ns
- μC
©2012 Fairchild Semiconductor Corporation
FDD4N60NZ Rev. C1
2
www.fairchildsemi.com


Features FDD4N60NZ — N-Channel UniFETTM II MOSF ET FDD4N60NZ N-Channel UniFETTM II MOS FET 600 V, 3.4 A, 2.5 Ω Features • R DS(on) = 1.9 Ω (Typ.) @ VGS = 10 V, ID = 1.7 A • Low Gate Charge (Typ. 8.3 nC) • Low Crss (Typ. 3.7 pF) • 100% Avalanche Tested • Improved dv/dt Ca pability • ESD Imoroved Capability RoHS Compliant Applications • LCD/L ED/PDP TV • Lighting • Uninterrupti ble Power Supply November 2013 Descrip tion UniFETTM II MOSFET is Fairchild Se miconductor’s high voltage MOSFET fam ily based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resist ance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD d iode allows UniFETTM II MOSFET to withs tand over 2kV HBM surge stress. This de vice family is suitable for switching p ower converter applications such as pow er factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ba.
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