Power MOSFET. IRFU540Z Datasheet


IRFU540Z MOSFET. Datasheet pdf. Equivalent


IRFU540Z


HEXFET Power MOSFET
APPROVED

PD - TBD

AUTOMOTIVE MOSFET

Features
lAdvanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

G

Absolute Maximum Ratings

Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation

Linear Derating Factor

VGS Gate-to-Source Voltage

dEAS (Thermally limited) Single Pulse Avalanche Energy

EAS (Tested )

hSingle Pulse Avalanche Energy Tested Value

ÙIAR Avalanche Current

gEAR Repetitive Avalanche Energy

TJ Operating Junction and

TSTG

Storage Temperature Range

Reflow Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw
Thermal Resistance

Parameter

jRθJC ijRθJA jRθJA

Junction-to-Case Junction-to-Ambient (PCB mount) Junction-to...



IRFU540Z
APPROVED
PD - TBD
AUTOMOTIVE MOSFET
Features
lAdvanced Process Technology
lUltra Low On-Resistance
l175°C Operating Temperature
lFast Switching
lRepetitive Avalanche Allowed up to Tjmax
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Tested )
hSingle Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ Operating Junction and
TSTG
Storage Temperature Range
Reflow Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
ijRθJA
jRθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
IRFR540Z
IRFU540Z
HEXFET® Power MOSFET
D
VDSS = 100V
RDS(on) = 28.5m
S ID = 35A
D-Pak
IRFR540Z
I-Pak
IRFU540Z
Max.
35
25
140
91
0.61
± 20
39
75
See Fig.12a, 12b, 15, 16
-55 to + 175
300
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
–––
Max.
1.64
40
110
Units
°C/W
1
2/3/05

IRFU540Z
IRFR/U540Z
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
IGSS Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Qg Total Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
LD Internal Drain Inductance
100 ––– –––
––– 0.092 –––
––– 22.5 28.5
2.0 ––– 4.0
28 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 39 59
––– 11 –––
––– 12 –––
––– 14 –––
––– 42 –––
––– 43 –––
––– 34 –––
––– 4.5 –––
V VGS = 0V, ID = 250µA
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 21A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 21A
µA VDS = 100V, VGS = 0V
VDS = 100V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
ID = 21A
enC VDS = 50V
VGS = 10V
VDD = 50V
ID = 21A
ens RG = 13
VGS = 10V
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 7.5 –––
from package
G
and center of die contact
S
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 1690 –––
––– 180 –––
––– 100 –––
––– 720 –––
––– 110 –––
––– 190 –––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 35
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 140
A showing the
integral reverse
––– ––– 1.3
––– 32 48
––– 40 60
p-n junction diode.
eV TJ = 25°C, IS = 21A, VGS = 0V
ens TJ = 25°C, IF = 21A, VDD = 50V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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