IRF8113GPbF Power MOSFET Datasheet

IRF8113GPbF Datasheet, PDF, Equivalent


Part Number

IRF8113GPbF

Description

Power MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRF8113GPbF Datasheet


IRF8113GPbF
Applications
l Synchronous MOSFET for Notebook
Processor Power
l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
l Lead-Free
l Halogen-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 100% Tested for RG
PD - 96251
IRF8113GPbF
VDSS
30V
HEXFET® Power MOSFET
RDS(on) max
Qg Typ.
:5.6m @VGS = 10V 24nC
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Max.
30
± 20
17.2
13.8
135
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 10
www.irf.com
1
07/09/09

IRF8113GPbF
IRF8113GPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)
IDSS
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.024 –––
––– 4.7 5.6
––– 5.8 6.8
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 17.2A
eVGS = 4.5V, ID = 13.8A
1.5 ––– 2.2
V VDS = VGS, ID = 250µA
––– - 5.4 ––– mV/°C
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
73 ––– ––– S VDS = 15V, ID = 13.3A
––– 24 36
––– 6.2 –––
VDS = 15V
––– 2.0 ––– nC VGS = 4.5V
––– 8.5 –––
ID = 13.3A
––– 7.3 –––
See Fig. 16
––– 10.5 –––
––– 10 ––– nC VDS = 10V, VGS = 0V
––– 0.8 1.5
––– 13 –––
eVDD = 15V, VGS = 4.5V
––– 8.9 –––
ID = 13.3A
––– 17 ––– ns Clamped Inductive Load
––– 3.5 –––
––– 2910 –––
––– 600 –––
––– 250 –––
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
™IAR Avalanche Current
Typ.
–––
–––
Max.
48
13.3
Units
mJ
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 3.1
MOSFET symbol
A showing the
––– ––– 135
integral reverse
––– ––– 1.0
p-n junction diode.
eV TJ = 25°C, IS = 13.3A, VGS = 0V
––– 34 51 ns TJ = 25°C, IF = 13.3A, VDD = 10V
e––– 21 32 nC di/dt = 100A/µs
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Features Applications l Synchronous MOSFET for No tebook Processor Power l Synchronous Re ctifier MOSFET for Isolated DC-DC Conve rters in Networking Systems l Lead-Free l Halogen-Free Benefits l Very Low RDS (on) at 4.5V VGS l Low Gate Charge l Fu lly Characterized Avalanche Voltage and Current l 100% Tested for RG PD - 962 51 IRF8113GPbF VDSS 30V HEXFET® Powe r MOSFET RDS(on) max Qg Typ. :5.6m @ VGS = 10V 24nC S1 S2 S3 G4 AA 8D 7D 6 D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70° C Gate-to-Source Voltage Continuous Dr ain Current, VGS @ 10V cContinuous Drai n Current, VGS @ 10V Pulsed Drain Curre nt fPower Dissipation fPower Dissipatio n TJ TSTG Linear Derating Factor Oper ating Junction and Storage Temperature Range Thermal Resistance Parameter gR JL Junction-to-Drain Lead fRθJA Junct ion-to-Ambient Max. 30 ± 20 17.2 13.8 135 2.5 1.6 0.02 -55 to + 150 Typ. ––– ––– Max. 20 50 Units V A W W.
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