Purpose Transistors. L8050HSLT3G Datasheet


L8050HSLT3G Transistors. Datasheet pdf. Equivalent


L8050HSLT3G


General Purpose Transistors
LESHAN RADIO COMPANY, LTD.

General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package. IC =1.5 A.
ƽEpitaxial planar type. ƽNPN complement: L8050H ƽPb-Free Package is available. ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L8050HPLT1G

S-L8050HPLT1G 1HA

3000/Tape&Reel

L8050HPLT3G

S-L8050HPLT3G 1HA

10000/Tape&Reel

L8050HQLT1G

S-L8050HQLT1G 1HC

3000/Tape&Reel

L8050HQLT3G

S-L8050HQLT3G 1HC

10000/Tape&Reel

L8050HRLT1G L8050HRLT3G L8050HSLT1G L8050HSLT3G

S-L8050HRLT1G S-L8050HRLT3G S-L8050HSLT1G S-L8050HSLT3G

1HE 1HE 1HG 1HG

3000/Tape&Reel 10000/Tape&Reel 3000/Tape&Reel 10000/Tape&Reel

MAXIMUM RATINGS Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
THERMAL CHARACTERISTICS Characteristic
Total Device Dissipation FR-5 Board,(1) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation Alumina Substrate,(2) TA=25°C Derate above 25°C
Thermal Resistance,Junction to Ambient Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

Symbol
VCEO VCBO VEBO
IC

Max 25 40 5 1500

Unit V V V
mAdc

Symbol PD
R θJ A PD
R θJ A T j,T St g

Max

Unit

225 mW...



L8050HSLT3G
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
ƽHigh current capacity in compact package.
IC =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
ƽPb-Free Package is available.
ƽS- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
L8050HPLT1G
S-L8050HPLT1G 1HA
3000/Tape&Reel
L8050HPLT3G
S-L8050HPLT3G 1HA
10000/Tape&Reel
L8050HQLT1G
S-L8050HQLT1G 1HC
3000/Tape&Reel
L8050HQLT3G
S-L8050HQLT3G 1HC
10000/Tape&Reel
L8050HRLT1G
L8050HRLT3G
L8050HSLT1G
L8050HSLT3G
S-L8050HRLT1G
S-L8050HRLT3G
S-L8050HSLT1G
S-L8050HSLT3G
1HE
1HE
1HG
1HG
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Symbol
VCEO
VCBO
VEBO
IC
Max
25
40
5
1500
Unit
V
V
V
mAdc
Symbol
PD
R θJ A
PD
R θJ A
T j,T St g
Max
Unit
225 mW
1.8 mW/°C
556 °C/W
300 mW
2.4 mW/°C
417
-55 to +150
°C/W
°C
L8050HQLTIG
Series
S-L8050HQLTIG
Series
3
1
2
SOT–23
COLLECTOR
3
1
BASE
2
EMITTER
Rev.A 1/3

L8050HSLT3G
LESHAN RADIO COMPANY, LTD.
L8050HQLTIG
Series
S-L8050HQLTIG
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
V(BR)CEO
25
Emitter-Base Breakdown Voltage
(IE=100µΑ)
V(BR)EBO
5
Collector-Base Breakdown Voltage
(IC=100µΑ)
V(BR)CBO
40
Collector Cutoff Current (VCB=35V)
ICBO
Emitter Cutoff Current (VEB=4V)
IEBO – –
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
ON CHARACTERISTICS
–V
–V
–V
150 nA
150 nA
Max
Unit
DC Current Gain
IC=100mA,VCE=1V
Collector-Emitter Saturation Voltage
(IC=800mA IB=80mA)
hFE
VCE(S)
100
-
- 600
- 0.5 V
NOTE :
*P
hFE 100~200
Q
150~300
R
200~400
S
300~600
Rev.A 2/3




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