2SC2715 | GME
NPN Transistor
Silicon Epitaxial Planar Transistor
FEATURES
z High power gain z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Col.
- 2SC2715 | BLUE ROCKET ELECTRONICS
- Silicon NPN transistor
- 2SC2715
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-23 NPN 。Silicon NPN transistor in a SOT-2.
- 2SC2715
Rev.E Mar.-2016
DATA SHEET
/ Descriptions
SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.
/ Features
，，。 High power gain, recommended for FM IF,OSC stage and AM CONV.IF stage.
/ Applications
。 High frequency amplifier applications.
/ Equivalent Circuit
/ Pinning
3
2 1
PIN1：Emitter
PIN 2：Base PIN 3：Collector
/ hFE Classifications & Marking
hFE Classifications Symbol hFE Range
R 40～80
O 70～140
Markin.
- 2SC2715 | GME
- NPN Transistor
- Silicon Epitaxial Planar Transistor
FEATURES
z High power gain z Recommended for FM IF,OSC stage
an.
- Silicon Epitaxial Planar Transistor
FEATURES
z High power gain z Recommended for FM IF,OSC stage
and AM CONV.IF stage
Pb
Lead-free
APPLICATIONS
z High Frequency Amplifier Applications
Production specification
2SC2715
ORDERING INFORMATION
Type No.
Marking
2SC2715
RR1/RO1/RY1
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
35
VCEO
Collector-Emitter V.
- 2SC2715 | Jin Yu Semiconductor
- TRANSISTOR
- 2SC2715
TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE
z z
High Power Gain Recommended for FM IF,OSC .
- 2SC2715
TRANSISTOR (NPN)
FEATURES
SOT-23
1. BASE
z z
High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 50 350 150 -55-150.
- 2SC2715 | SeCoS
- NPN Transistor
- 2SC2715
Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor
RoHS Compliant Pro.
- 2SC2715
Elektronische Bauelemente 0.05A , 35V NPN Plastic-Encapsulate Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-23
A
3 3
High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage.
1
L
Top View
C B
1 2 2
CLASSIFICATION OF hFE
Product-Rank Range Marking 2SC2715-R 40~80 RR1 2SC2715-O 70~140 RO1 2SC2715-Y 120~240 RY1
K
E D
F
G
Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20.
- 2SC2715 | Kexin
- NPN Transistor
- SMD Type
Silicon NPN Epitaxial 2SC2715
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
F.
- SMD Type
Silicon NPN Epitaxial 2SC2715
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors IC
Unit: mm
Features
+0.1 2.4-0.1
High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz). Recommended for FM IF, OSC stage and AM CONV. IF stage.
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter.
