80N055 Datasheet: NP80N055





80N055 NP80N055 Datasheet

Part Number 80N055
Description NP80N055
Manufacture NEC
Total Page 8 Pages
PDF Download Download 80N055 Datasheet PDF

Features: DATA SHEET MOS FIELD EFFECT TRANSISTOR N P80N055CLE, NP80N055DLE, NP80N055ELE SW ITCHING N-CHANNEL POWER MOS FET INDUSTR IAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataShe et4UT.rcaonmsistor designed for high cu rrent switching applications. FEATURES • Channel temperature 175 degree rate d • Super low on-state resistance RDS (on)1 = 11 mΩ MAX. (VGS = 10 V, ID = 40 A) RDS(on)2 = 13 mΩ MAX. (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 290 0 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER NP80N055CLE NP80N055DLE NP80N055ELE P ACKAGE TO-220AB TO-262 TO-263 (TO-220A B) ABSOLUTE MAXIMUM RATINGS (TA = 25° C) Drain to Source Voltage VDSS 55 Gate to Source Voltage Drain Current (D C) Note1 Drain Current (Pulse) Note2 V GSS ID(DC) ID(pulse) ±20 ±80 ±200 Total Power Dissipation (TA = 25 °C) PT 1.8 Total Power Dissipation (TC = 25 °C) Single Avalanche Current Note3 Single Avalanche Energy Note3 PT IAS EAS 120 45 / 30 / 10 2.0 / 90 / 100 Chann.

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055CLE, NP80N055DLE, NP80N055ELE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect
www.DataSheet4UT.rcaonmsistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on)1 = 11 mMAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 13 mMAX. (VGS = 5 V, ID = 40 A)
Low Ciss : Ciss = 2900 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
NP80N055CLE
NP80N055DLE
NP80N055ELE
PACKAGE
TO-220AB
TO-262
TO-263
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
Drain Current (DC) Note1
Drain Current (Pulse) Note2
VGSS
ID(DC)
ID(pulse)
±20
±80
±200
Total Power Dissipation (TA = 25 °C)
PT
1.8
Total Power Dissipation (TC = 25 °C)
Single Avalanche Current Note3
Single Avalanche Energy Note3
PT
IAS
EAS
120
45 / 30 / 10
2.0 / 90 / 100
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to +175
V
V
A
A
W
W
A
mJ
°C
°C
Notes 1. Calculated constant current according to MAX. allowable channel
temperature.
2. PW 10 µs, Duty cycle 1 %
3. Starting Tch = 25 °C, RG = 25 , VGS = 20 V0 V (see Figure 4.)
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25 °C/W
Channel to Ambient
Rth(ch-A)
83.3 °C/W
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14097EJ3V0DS00 (3rd edition)
Date Published March 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999,2000

                    
  






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