NP50P03YDG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0019EJ0200 Rev.2.00
Mar 16, 2011
Description
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A)
Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V...
